Centre d’Élaboration de Matériaux et d’Etudes Structurales (UPR 8011)


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Ion implantation and thin films/nanoparticles growth facilities

The Implantation and Growth platform in CEMES is open to all the scientific community including researchers from both academic laboratories and private companies.
It aims at providing expertise, tools and instruments dedicated to nanotechnology and nanomaterials: ion implantion and deposition allow to synthesize nanoparticles (embedded in a matrix or deposited on a free surface), to deposit thin and ultra thin films, to irradiate them and to generate controlled defects in materials.

 

Experimental techniques

  • Implantation: the ion implanter is a Varian one retrofitted in 2015 with a specificity: an Ultra Low Energy (ULE) stage designed and fabricated by CEMES engineers and researchers that allows implantation in an especially wide ions energy range of 0.6 keV to 200 keV. This unique machine for ULE-Ion Beam Synthesis (IBS) allows synthesizing semiconducting and metallic nanocrystals into dielectric thin layers. The choice of the Ultra-Low Energy (<5keV) aims to obtain nanocrystals at a well-controlled depth close to the free surface and/or embedded in thin layers.

In the field of innovative semiconductor devices, the ion implantation is used at CEMES to change the properties of specific materials by inducing deformations and stress or by creating controlled defects. The ion implanter is also used here to irradiate thin films in order to modify their magnetic properties.

 

  • Growth: The platform provides two sputtering machines, a Plassys and a Mantis: both are equipped with sources dedicated to the atomically controlled growth of thin and ultrathin films. To generate and control original properties in the developed nanostructures, the new Mantis equipment, acquired in the frame of the CPER NANOMAT (2015-2020), is also equipped with a very innovative source allowing the synthesis of nanoparticles in the gas phase, with well controlled size, composition and morphology, and their deposition on various substrates. This equipment also includes analysis technical as an in situ RHEED, an ellipsometer, a Residual Gas Analyzer (RGA),a pyrometer and a Quartz Microbalance.

 

  • Facilities: in addition to these synthesis techniques, facilities are available to perform high temperature annealing processes up to 1250°C: Rapid thermal Annealing (Annealsys) and Conventional furnace ( Carbolite).

 

 

People skills

  • Development of custom experimental setups/process related to ion implantation, deposition or synthesis of nanoparticles.
  • Expertise and technical support to the users of the platform.

 

Contacts

  • Béatrice Pécassou (head): pecassou [at] cemes.fr
  • Sophie Barre: barre [at] cemes.fr