Salle de conférence
29 rue Jeanne Marvig - 31055 Toulouse Cedex 4
This talk reviews the advances that subsecond thermal processing using flash lamps and lasers brings to the processing of the most advanced semiconductor materials, thus enabling the fabrication of novel electronic structures and materials. It will be demonstrated how such developments can translate into important practical applications leading to a wide range of technological benefits.
Recently we could demonstrate that germanium and silicon exhibit superconductivity at ambient pressure. For the first time, techniques of the state-of-the-art semiconductor processing as ion implantation and FLA were used to fabricate such material based on a highly doped Ga-rich layer at the surface (Phys.Rev.Lett., 102, 217003 (2009)). Moreover we demonstrated that carrier-mediated ferromagnetism can be reached in manganese-implanted and Laser-annealed Ge (Appl.Phys. Lett., 96, 202105 (2010)).
Regarding photovoltaic applications, we dealt with two aspects: (i) the ion beam doping and thermal processing of so-called dirty silicon demonstrating a distinct improvement of the minority carrier diffusion length compared to RTP and furnace treatments, and (ii), for the annealing of CIGS layers millisecond annealing leads to better optical output and lower degradation
Whereas all these examples base on solid phase processing the more sophisticated approach regards on working with the liquid phase at the surface of solid substrates. A very recent example is the controlled formation of III-V nanocrystals (InAs, GaAs) in silicon after ion beam synthesis (NanoLett. 11, 2814 (2011)).