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• “Diffusion and activation of dopants in silicon
and advanced silicon-based materials”, P.Pichler, C.J. Ortiz1,
B. Colombeau, N.E.B. Cowern, E. Lampin, S. Uppal, M.S.A. Karunaratne,
J.M. Bonar, A.F. W. Willoughby, A. Claverie, F. Cristiano, W. Lerch,
S. Paul, Physica Scripta, T126 (2006) 89 (Invited)
• “Fluorine-vacancy complexes in ultrashallow B-implanted
Si”, D.A.Abdulmalik, P.G.Coleman, N.E.B.Cowern, A.J.Smith,
B.J.Sealy, W.Lerch, S.Paul and F.Cristiano, Appl. Phys. Lett., 89
(2006) 052114
• “Deactivation of ultra-shallow B implants in pre-amorphised
Si after non-melt laser annealing with multiple scans”, J.
Sharp, N.Cowern, R.Webb, D.Giubertoni, S.Gennaro, M.Bersani, M.Foad,
K.Kirkby, P.F.Fazzini and F. Cristiano, Appl. Phys. Lett., 89 (2006)
192105
• “Defects evolution and dopant activation anomalies
in ion implanted silicon”, F.Cristiano, Y.Lamrani, F.Severac,
M.Gavelle, S.Boninelli, NCherkashin, O.Marcelot, A.Claverie, W.Lerch
and S.Paul, Nucl. Instr. and Meth. In Phys. Res. B, 253 (2006) 68-79.
(Invited)
• “Transformation of {113} defects into dislocation
loops mediated by the {111} rod-like defects”, S.Boninelli,
N.Cherkashin, A.Claverie and F.Cristiano, Nucl. Instr. and Meth.
in Phys. Res. B, 253 (2006) 80–84
• “Evidences of an intermediate rodlike defect during
the transformation of {113} defects into dislocation loops”,
S.Boninelli, N.Cherkashin, A.Claverie and F.Cristiano, Appl. Phys.
Lett., 89 (2006) 161904
• “Evidences of F-induced nanobubbles as sink for self-interstitials
in Si”, S.Boninelli, A.Claverie, G.Impellizzeri, S.Mirabella,
F.Priolo, E.Napolitani and F.Cristiano, Appl. Phys. Lett. 89 (2006)
171916
• “Effect of Fluorine on the activation and diffusion
behaviour of boron implanted preamorphised silicon”, S.Paul,
W.Lerch, B.Colombeau, N.E.B.Cowern, F.Cristiano, S.Boninelli and
D.Bolze, J. Vac. Sci. and Tech. B, 24 (2006) 437-441
• “Influence of F+ Co-Implants on EOR Defect Formation
in B+-Implanted, Ultrashallow Junctions”, S.Boninelli, F.Cristiano,
W.Lerch, S.Paul and N.E.B.Cowern, Electrochem. and Solid-State Lett.,
10 (2007) H264-H266
• “Evolution of boron-interstitial clusters in crystalline
Si studied by transmission electron microscopy”, S.Boninelli,
S.Mirabella, E.Bruno, F.Priolo, F.Cristiano, A.Claverie, D.De Salvador,
G.Bisognin and E.Napolitani, Appl. Phys. Lett., 91 (2007) 031905
• “Optimum activation and diffusion with a combination
of spike and Flash annealings”, S. Paul, W. Lerch, J. Chan,
S. McCoy, J. Gelpey, F. Cristiano, F. Severac, P. F. Fazzini and
D. Bolze, J. Vac. Sci. and Tech. B, 26 (2008) 293-297.
• “Modelling of Boron Trapping at End-Of-Range Defects
in Pre-amorphized Ultra-Shallow Junctions”, E.M.Bazizi, P.F.Fazzini,
C.Zechner, A.Tsibizov, H.Kheyrandish, A.Pakfar, L.Ciampolini, C.Tavernier
and F.Cristiano, Mat. Sci. and Eng. B, 154-155 (2008) 275-278
• “Extended Defects Evolution in pre-amorphised silicon
after millisecond Flash anneals”, F.Cristiano, E.M.Bazizi,
P.F.Fazzini, S.Boninelli, R.Duffy, A.Pakfar, S.Paul and W.Lerch,
Materials Science Forum, 573-574 (2008) 269-277. (Invited)
• “Evidence of the carrier mobility degradation in
highly B-doped ultra-shallow junctions by Hall effect measurements”,
F.Séverac, F.Cristiano, E.Bedel-Pereira, W.Lerch, S.Paul
and H.Kheyrandish, Mat. Sci. and Eng. B, 154-155 (2008) 225-228
• “Surface proximity and boron concentration effects
on end-of-range defect formation during nonmelt laser annealing”,
J.A.Sharp, A.J.Smith, R.P.Webb, K.J.Kirkby, N.E.B.Cowern, D.Giubertoni,
S.Gennaro, M.Bersani, M.A.Foad, P.F.Fazzini and F.Cristiano, Appl.
Phys. Lett., 92 (2008) 082109
• “Formation and evolution of F nanobubbles in amorphous
and crystalline Si”, S.Boninelli, G.Impellizzeri, S.Mirabella,
F.Priolo, E.Napolitani, N.Cherkashin and F.Cristiano, Appl. Phys.
Lett., 93 (2008) 061906
• “Advanced Activation Trends for Boron and Arsenic
by Combinations of Single, Multiple Flash Anneals and Spike Rapid
Thermal Annealing”, W.Lerch, S.Paul, J.Niess, S.McCoy, J.Gelpey,
F.Cristiano, F.Severac, P.F.Fazzini, A.Martinez-Limia, P.Pichler,
H.Kheyrandish and D.Bolze, Mat. Sci. and Eng. B, 154-155 (2008)
3-13. (Invited)
• “Defect Evolution and C+/F+ Co-implantation in Millisecond
Flash annealed Ultra-Shallow Junctions”, F.Cristiano, E.M.Bazizi,
P.F.Fazzini, S.Paul, W.Lerch, S.Boninelli, R.Duffy, A.Pakfar, H.Bourdon
and F.Milesi, Proceedings of the 2008 International Workshop on
Junction Technology, IWJT 2008. ISBN: 978-1-4244-1737-7, IEEE 2008,
p. 114-119. (Invited)
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• “Carrier mobility degradation due to high dose implantation in
ultrathin unstrained and strained silicon-on-insulator films”,
C.Dupré, T.Ernst, J.-M.Hartmann, F.Andrieu, J.-P.Barnes,
P.Rivallin, O.Faynot, S.Deleonibus, P.F.Fazzini, A.Claverie, S.Cristoloveanu,
G.Ghibaudo and F.Cristiano, J. Appl. Phys., 102 (2007), 104505
• “Defect evolution after germanium preamorphization
in silicon on insulator structures”, P.F.Fazzini, F.Cristiano,
C.Dupré, A.Claverie, T.Ernst and M.Gavelle, J. Vac. Sci.
Tech. B, 26 (2008) 342-346
• “Evolution of end-of-range defects in silicon-on-insulator
substrates”, P.F.Fazzini, F.Cristiano, C.Dupré, S.Paul,
T.Ernst, H.Kheyrandish, K.K.Bourdelle and W.Lerch, Mat. Sci. and
Eng. B, 154-155 (2008) 256-259.
• “Effect of voids-controlled vacancy supersaturations
on B diffusion”, O.Marcelot, A.Claverie, F.Cristiano, F.Cayrel,
D.Alquier, W.Lerch, S.Paul, L.Rubin, H.Jaouen and C.Armand, Nucl.
Inst. Meth. B, 257 (2007) 249-252
• “Strengths and Limitations of the Vacancy Engineering
Approach for the Control of Dopant Diffusion and Activation in Silicon”,
A.Claverie, F.Cristiano, M.Gavelle et al., Mater. Res. Soc. Symp.
Proc., vol. 1070 (2008) 3-14. (Invited)
• “Physical understanding and simulation of transient
enhanced diffusion in SOI materials”, E.M. Bazizia P.F. Fazzini,
F. Cristiano, A. Pakfar, C. Tavernier, H. Kheyrandish, S. Paul,
W. Lerch, submitted to Appl. Phys. Lett.
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• “Detection of Cs2Ge+ clusters for the quantification
of germanium atoms by secondary ion mass spectrometry: Application
to the characterization of Si1-xGex layers (0<x<1) and germanium
diffusion in silicon”, M.Gavelle, E.Scheid, F.Cristiano, C.Armand,
J.-M.Hartmann, Y.Campidelli, A.Halimaoui, P.F.Fazzini and O.Marcelot,
J. Appl. Phys., 102 (2007) 074904
• “Study of silicon-germanium interdiffusion from pure
germanium deposited layers”, M.Gavelle, E.M.Bazizi, E.Scheid,
C.Armand, P.F.Fazzini, O.Marcelot, Y.Campidelli, A.Halimaoui and
F.Cristiano, Mat. Sci. and Eng. B, 154-155 (2008) 110-113.
• “Detailed investigation of Ge-Si interdiffusion in
the full range of Si1-xGex (0<x<1) composition”, M.Gavelle,
E.M.Bazizi, E.Scheid, P.F.Fazzini, F.Cristiano, C.Armand, W.Lerch,
S.Paul, Y.Campidelli and A.Halimaoui, J. Appl. Phys., 104 (2008)
113524
• “Doping of germanium by phosphorus implantation:
Prediction of diffused profiles with simulation”, S. Koffel,
P. Scheiblin, A. Claverie, V. Mazzocchi, Mat. Sci. and Eng. B, 154-155
(2008) 60-63.
• “Amorphization kinetics of germanium under ion implantation”,
S. Koffel, A. Claverie, G. BenAssayag and P. Scheiblin, Mat. Sci.
Semic. Proc., 9 (2006) 664-667
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