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- Vincent PAILLARD -

Since 01/01/2007

Professor, University of Toulouse, CEMES-CNRS

2003-2006

Professor, University of Toulouse, Laboratory of Solid State Physics

1995-2003

Assistant Professor, University of Toulouse, Laboratory of Solid State Physics

1994-1995

Research and Teaching Assistant, Ecole Centrale of Lyon
Laboratory of Electronics, Optoelectronics and Microsystems

1990-1993

PhD in Materials Physics, University Claude Bernard (Lyon)
Teaching assistant (Moniteur)
Department of Materials Physics

1989-1990

Master (DEA & Maîtrise de physique), University Claude Bernard (Lyon)

1988

Undergraduate studies (Licence de physique), University of Burgundy (Dijon)

Optical properties of nanoparticles (Silicon nanocrystals)

Spatial organization of nanocrystals

Stress in silicon and silicon-germanium alloys

Innovating materials and substrates for microelectronics (SOI
substrates, strained silicon, ...)

Amorphous semiconductors

Raman spectrometry

Young scientists interested in my research activities are encouraged to take contact. PhD thesis and post-doctoral positions can be funded by different means (European Union, French government, industry). Education in Physics is required (knowledge in optics, electromagnetism, condensed matter physics, quantum mechanics are preferred but not obliged).
A subject for a PhD thesis can be found here:
http://www.cemes.fr/Ecoles_Doctorales/site_web-ed/index.htm

Visit the Web Site of the Master of Physics
http://ufrpca-phy.ups-tlse.fr/masterphys/

Hydrogen implantation-induced defects in bulk Si studied by Raman spectrometry.
C. Villeneuve, V. Paillard, K. Bourdelle, I. Cayefourcq, A. Boussagol, M. Kennard.
Nuclear Instr. and Meth. B, 253, 182-186 (2006).

Characterization of few-nanocrystals electronic devices by photoluminescence imaging.
A. Arbouet, M. Carrada, F. Demangeot, V. Paillard, G. BenAssayag, C. Bonafos, A. Claverie, S. Schamm, C. Dumas, J. Grisolia, M.A.F. Van den Boogaart, J. Brugger, L. Doeswijk.
J. Luminescence 121, 340-343 (2006).

Electron-acoustic phonon interaction and resonant Raman scattering in Ge quantum dots: matrix and quantum confinement effects.
J-R. Huntzinger, A. Mlayah, V. Paillard, A. Wellner, N. Combe, C. Bonafos.
Phys. Rev. B 74, 115308 (2006).

Experimental study of LO phonons and excitons in ZnO nanoparticles produced by room-temperature organometallic synthesis.
F. Demangeot, V. Paillard, P. M. Chassaing, C. Pages, M. L. Kahn, A. Maisonnat, B. Chaudret.
Appl. Phys. Lett. 88, 071921 (2006).

Photoluminescence of Si nanocrystal memory devices obtained by ion beam synthesis.
M. Carrada, A. Wellner, V. Paillard, C. Bonafos, H. Coffin, A. Claverie.
Appl. Phys. Lett. 87, 251911-251913 (2005).

Engineering Strained Silicon On Insulator wafers with the Smart-CutTM technology.
B. Ghyselen et al.
Solid State Electron. 48, 1285-1296 (2004).

Stress measurement and modeling in silica-embedded germanium nanocrystals.
A. Wellner, V. Paillard, C. Bonafos, H. Coffin, A. Claverie, B. Schmidt, K. H. Heinig.
J. Appl. Phys., 94, 5639-5642 (2003).

Full list here