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Growth mechanisms, stress relaxation mechanisms and auto-assembly
Marie-José Casanove, Nicolas Combe , François Demangeot, Christophe Gatel, Anne Ponchet, André Rocher, Hao Tang

The axis is devoted to the role of interfaces and internal stresses in elaboration, structure, and properties of nanostructured materials. Several levels of nanostructuration are studied :

 • Vertical nanostructuration by epitaxy (nanometric layers and multilayers)
 • Self-organisation by Stransky-Krastanov growth mode (quantum dots)
 • Nanostructuration using patterned or vicinal substrates
 • Self-assemblage of molecules on surfaces.

Collaborations:
GDR CNRS 1380 MECANO (Mechanics of Nano-Objects)
Groupe Photonique LAAS-CNRS (Toulouse)
Laboratoire FOTON-INSA (Rennes)
Groupe LASPE-IPEQ, Ecole Polytechnique Fédérale de Lausanne (EPFL)…

Micro-photoluminescence (µ-PL) of GaN islands grown by MOVPE on a cracked AlN layer : (a) emission of strained quantum dots, grown near a crack ; (c) emission of large dislocated islands, far from cracks ; (b) intermediate situation. J. Crystal Growth, 299, 254 (2007).

HREM image (TECNAI) of 15 monolayers (4.5 nm) of InAs grown by MBE on Ga0.47In0.53As/InP with a residual antimony flux. The layer remains elastically strained although the high lattice parameter (3.2%).
Self-assembly of CoPc molecules (Cobalt-Phthalocyanine) on a Cu(111) surface (Simulation of a STM image) ; one CoPc molecule occupies an ''hollow'' site of the molecules forming the first layer. See also J. Phys. Chem. C 112, 7698 (2008).


Kinetic Monte Carlo simulation of the growth of an epitaxial strained layer (here the lattice mismatch with the substrate
is -4%).

GaAs layers grown by liquid phase epitaxial lateral overgrowth (ELO) on SiO2 - masked (001) GaAs substrates : the TEM image shows a coalescence front of two ELO wings. Note the void at the mask surface and the well-organized set of dislocations starting at a distance of about 1 µm from the void. J. Appl. Phys. 101, 13508-1-5 (2007).

 

 

Current studies :

• Plastic and elastic relaxation (2D-3D transition) in III-V strained semiconductors (antimonides InSb, InAsSb, nitrides GaN/AlN…)

• Interfaces and stress state in (multi)layers InAs/AlSb, GaN/AlN…

• Interfaces and properties (magnetism, transport…) in (multi)layers of magnetic oxides and multiferroic materials

• Role of substrate nanostructuration on the growth mode of strained materials

• Simulation of self-assembly and interfaces in hybrid organic-inorganic systems.

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Publications :

Claire Pinquier, thèse de Doctorat de l’Université Paul Sabatier de Toulouse (2006)

Porous Network Structure of Octacyano-Metal-Free Phthalocyanine on the Basal Plane of Highly Oriented Pyrolytic Graphite, Thiruvancheril G. Gopakumar, Hao Tang, Werner R. Thiel and Michael Hietschold, J. Chem. Phys. C 112, 7705 (2008)

Tunneling spectroscopy of lander molecules on coinage metal surfaces, X. Ge, J. Kuntze, R. Berndt, H. Tang and A. Gourdon, Chem. Phys. Lett. 458, 161 (2008)

Strong Generation of Coherent Acoustic Phonons in Semiconductor Quantum Dots, A. Devos, F. Poinsotte, J. Groenen, O. Dehaese, N. Bertru, and A. Ponchet, Phys. Rev. Lett. 98, 207402 (2007)

Strain relaxation of AlN epilayers Stranski-Krastanov GaN/AlN quantum dots grown by organic vapor phase epitaxy, D. Simeonov, E. Feltin, F. Demangeot, C. Pinquier, R. Butté, J.-F. Carlin, J. Frandon, N. Grandjean, Journal of Crystal Growth, 299, 254 (2007)

Room temperature spin filtering in epitaxial cobalt-ferrite tunnel barriers, A.V. Ramos, M.-J. Guittet, J.-B. Moussy, R. Mattana, C. Deranlot, F. Petroff, C. Gatel, Appl. Phys. Lett. 91, 122107-1-3 (2007)

Influence of a metallic or oxide top layer in epitaxial magnetic bilayers containing CoFe2O4(111) tunnel barriers
A.V. Ramos, J.-B. Moussy, M.-J. Guittet, M. Gautier-Soyer, C. Gatel, P. Bayle-Guillemaud, B. Warot-Fonrose, E. Snoeck
Phys. Rev. B 75, 224421-1-8 (2007)

Tilt and dislocations in epitaxial laterally overgrown GaAs layers
Z.R. Zytkiewicz, J.Z. Domagala, D. Dobosz, L. Dobaczewski, A. Rocher, C. Clement, J. Crestou, J. of Appl. Phys. 101, 13508-1-5 (2007)

Raman scattering by the longitudinal optical phonon in InN: Wave-vector nonconserving mechanisms, Demangeot F, Pinquier C, Frandon J, Gaio M, Briot O, Maleyre B, Ruffenach S, Gil B, Phys. Rev. B 71, 104305 (2005)

Raman scattering in large single indium nitride dots: Correlation between morphology and strain, Demangeot F, Frandon J, Pinquier C, Caumont M, Briot O, Maleyre B, Clur-Ruffenach S, Gil B, Phys. Rev. B 68, 245308 (2003)
 

Key-words:
Nanomaterials, III-V semiconductor, magnetic and multiferroic oxides, organic-inorganic systems, epitaxy, stress, interface, self-assemblage, self-organisation ,molecular dynamics, DFT, Monte Carlo.

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