This work is the result of a collaboration between the CEMES laboratory, NXP Semiconductors and the SATIE-ENS laboratory (Cachan), and has been motivated by the comprehension of the failure mechanisms of low voltage power MOSFET devices produced for applications in the automotive industry.
Jury members
- Mauro CIAPPA, ETH, Zurich (Rapporteur)
- Josef LUTZ, TU, Cheminitz (Rapporteur)
- Marie-Laure LOCATELLI, Laboratoire LAPLACE, Toulouse (Examinatrice)
- Michael NELHIEBEL, K.A.I. - Infineon, Villach (Examinateur)
- Stéphane LEFEBVRE, SATIE-ENS, Cachan (Examinateur)
- Philippe DUPUY, NXP Semiconductors, Toulouse (Invité)
- Marc LEGROS, CEMES-CNRS, Toulouse (Directeur de Thèse)
- Mounira BERKANI, , SATIE-ENS, Cachan (Directrice de Thèse)