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Roberta Ruffilli PhD defense

“Fatigue mechanisms in Al-based metallizations in power MOSFETs”.

PhD defense on Friday, December 8th at 10:00am in the conference room

This work is the result of a collaboration between the CEMES laboratory, NXP Semiconductors and the SATIE-ENS laboratory (Cachan), and has been motivated by the comprehension of the failure mechanisms of low voltage power MOSFET devices produced for applications in the automotive industry.


Jury members

  • Mauro CIAPPA, ETH, Zurich (Rapporteur)
  • Josef LUTZ, TU, Cheminitz (Rapporteur)
  • Marie-Laure LOCATELLI, Laboratoire LAPLACE, Toulouse (Examinatrice)
  • Michael NELHIEBEL, K.A.I. - Infineon, Villach (Examinateur)
  • Stéphane LEFEBVRE, SATIE-ENS, Cachan (Examinateur)
  • Philippe DUPUY, NXP Semiconductors, Toulouse (Invité)
  • Marc LEGROS, CEMES-CNRS, Toulouse (Directeur de Thèse)
  • Mounira BERKANI, , SATIE-ENS, Cachan (Directrice de Thèse)