Centre d’Élaboration de Matériaux et d’Etudes Structurales

Time-resolved nanocathodoluminescence in a TEM

A collaboration between researchers from CEMES and LPS-Orsay allowed for the first time to perform a time-resolved cathodoluminescence experiment in a transmission electron microscope


An open-source software for simple data acquisition from complex experimental setups

Complex 3D magnetic configurations revealed by an original holography-tomography method

The 3D magnetic configuration of longitudinal and transverse multi-vortex states in CoNi magnetic nanowires has been highlighted using the holographic vector-field electron tomography method.

Crystallization Kinetics of Nitrogen Doped Ge2Sb2Te5

Where it is shown that N bonding with Ge increases the viscosity of GeSbTe glasses and slows down nucleation and growth mechanisms during crystallization, two characteristics which allow to fabricate PCM devices of increased thermal stability.

Bioinspired time-temperature indicators

Beetles inspire the design of reflectors which in turn inspire the fabrication of time-temperature indicators that record the thermal history.

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30 October 2021

Thursday seminar - Let’s practice science through fiction

by Roland Lehoucq, CEA Saclay - LCEG
Thursday, November 18, 2021, 11 am
Seminar open to all - coffee served by 10.30 am

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25 September 2021

Thursday seminar - The energy-mineral resources nexus in the context of energy transition

by Olivier Vidal, ISTerre - CNRS
Thursday, October 21, 2021 at 11 am
Seminar open to all - coffee served at 10.30 am

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24 September 2021

PhD defense: Julien Gosteau

Thursday, October 14 at 2 pm in CEMES
“Ab initio calculations on Rashba-like spin-orbit effects in transition metal oxides and their interfaces”

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22 September 2021

PhD defense: Clément Majorel

Friday, October 8, 2021 at 10 am in CEMES
“Sub-wavelength optics of hyperdoped semiconductor structures”

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21 September 2021

PhD defense: Jérémy Roi

Friday, October 1, 2021 at 9.30 am in CEMES
"Study of the impact on crystal quality of a thin silicon layer transfered by Smart Cut™ process"

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